6T FA Using 2T EX-OR Gate
نویسندگان
چکیده
منابع مشابه
New Efficient 2T and Gate Design
This paper proposes a new design of 2T AND gate. Performance comparison of proposed gate with existing 2T GDI technique is presented. Different methods have been compared with respect to the number of devices, power consumption, power-delay product, temperature sustainability and noise immunity in order to prove the superiority of proposed design over existing 2T gate design. The simulation has...
متن کاملA new design 6T Full Adder Circuit using Novel 2T XNOR Gates
Exclusive-NOR (XNOR) gates are important in digital circuits. This paper proposes the novel design of 2T XNOR gate using pass transistor logic. The proposed circuit utilizes the least number of transistors and no complementary input signal is used. The design has been compared with earlier designed XNOR gates and a significant improvement in silicon area and power-delay product has been obtaine...
متن کاملTransistor Implementation Of Reversible Gate Using Novel 3 Transistor EX-OR Gate
The design of VLSI systems with less power dissipation has become an area of intense research interest. The development for the design of such a low power systems undoubtedly requires the efficient designing methodology. Reversible Logics are one of the alternatives for removing the power dissipation problem in the VLSI systems at logical level implementation. In this regard, at the physical or...
متن کاملAutonomous Gate Twin Fin 6T SRAM Cell Victimization Outpouring Reduction Techniques
Scaling of gadgets in mass CMOS engineering helps short direct impacts and increment in spillage. Static arbitrary access memory (SRAM) is required to involve 90% of the zone of Soc. Since spillage turns into the essential variable in SRAM cell, it is actualized utilizing FinFet. FinFet gadgets got to be better option for profound submicron advances. In this paper, 6t SRAM cell is actualized ut...
متن کاملNovel Subthreshold and Gate Leakage Reduction Techniques for 6T-SRAM Cell
Power has been an important issue for the present day microelectronic circuits of Soc designs. In the entire phase of design controlling power and dealing with power dissipation is very important. There are six leakage components in a MOS transistor. About 50 % of the total power consumption is through leakage components alone. Out of this 40 % power dissipation is through transistors.Out of th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Electronics and Communication Engineering
سال: 2018
ISSN: 2348-8549
DOI: 10.14445/23488549/ijece-v5i9p104